Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

被引：19

作者：

Shiojiri, Daishi ^{[1
]}

Yamauchi, Ryosuke ^{[1
]}

Fukuda, Daiji ^{[1
]}

Tsuchimine, Nobuo ^{[2
]}

Kaneko, Satoru ^{[1
,3
]}

Matsuda, Akifumi ^{[1
]}

Yoshimoto, Mamoru ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Kanagawa 2268502, Japan

[2] TOSHIMA Mfg Co Ltd, Saitama 3550036, Japan

[3] Kanagawa Ind Technol Ctr, Kanagawa 2430435, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 424卷

关键词：

Pulsed laser deposition; Laser processing; Excimer laser annealing; Solid phase crystallization; Oxides; Semiconducting materials; MOLECULAR-BEAM EPITAXY; TIN OXIDE-FILMS; AMORPHOUS-SILICON; BUFFER LAYER; GROWTH; DEPOSITION;

D O I：

10.1016/j.jcrysgro.2015.04.026

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly oriented crystalline Ga2O3 thin films were fabricated at room temperature (RT) by excimer laser annealing. Amorphous Ga2O3 thin films were grown on alpha-Al2O3 (0001) substrates at RT by the pulsed laser deposition method using a focused KrF excimer laser and a sintered beta-Ga2O3 target. Amorphous precursor films were irradiated by a non-focused KrF excimer laser (100-250 mJ/cm(2)) at RT. The results of x-ray and reflection high-energy electron diffraction measurements indicated that highly (101)-oriented crystalline beta-Ga2O3 thin films were obtained after RT laser annealing. The optical bandgaps of the crystalline thin films were approximately 4.7-4.9 eV, as determined from the UV/Vis transmittance. The film surfaces after laser annealing revealed slight planar grain growth, indicating a high degree of crystallinity and showed the root mean square roughnesses of 0.28-0.48 nm. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：38 / 41

页数：4

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