Effects of sputtered Ar pressure and substrate temperature on the microstructure and magnetic properties of Cr/SmCo5/Cr films

被引:0
|
作者
Zhen, Congmian [1 ]
Zhang, Jinjuan [1 ]
Ma, Li [1 ]
Hou, Denglu [1 ]
Liu, Ying [1 ]
Li, Shiqiang [2 ]
机构
[1] Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Hebei, Peoples R China
[2] Hebei Normal Univ, Dept Phys, Coll Sci, Shijiazhuang 050016, Hebei, Peoples R China
关键词
sputtered Ar pressure; magnetic measurements; atomic force microscopy; longitudinal magnetic recording;
D O I
10.1142/S0218625X08011056
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cr/SmCo5/Cr films were fabricated by a DC facing targets magnetron sputtering. The influences of sputtered Ar pressure and substrate temperature on their microstructure and magnetic properties were investigated. Magnetic measurements indicate that the optimal substrate temperature was 450 degrees C, and the film deposited at 2Pa Ar pressure had the largest in-plane coercivity (2403.54 Oe). No SmCo5 diffraction peaks except Cr (110) peak with body-centered-cubic structure were seen in all the samples by X-ray diffusion. The Needle-like grains of the film deposited at low Ar pressure were observed by atomic force microscope. The domain pattern of the. lm fabricated at 2Pa Ar pressure showed more uniform. When the sputtered Ar pressure was 2 Pa, the narrowest switching field distribution (0.57) was obtained, indicating a narrower grain size distribution. The delta M value was nearly zero for the. lm deposited at 2Pa Ar pressure, and this indicated that there was almost noninteraction between grains.
引用
收藏
页码:105 / 109
页数:5
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