Terahertz emission from phosphor Centers in SiGe and SiGe/Si semiconductors

被引：0
|
作者：
Paylov, S. G. [1 ]
Huebers, H. M. [1 ]
Abrosimov, N. V. [2 ]
Riernann, H. [2 ]
Radarnson, H. H. [3 ]
Bekin, N. A. [4 ]
Yablonsky, A. N. [4 ]
Zhukavin, R. Kh. [4 ]
Drozdov, Yu. N. [4 ]
Shastin, V. N. [4 ]
机构：
[1] German Aerosp Ctr DLR, Inst Planetary Res, D-12489 Berlin, Germany
[2] Inst Crystal Growth, D-12489 Berlin, Germany
[3] Royal Inst Technol KTH, Kista 16640, Sweden
[4] Russian Acad Sci, Inst Phys Microstruct, Moscow 603950, Russia
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷
基金：
俄罗斯基础研究基金会;
关键词：
silicon-germanium; terahertz emission;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Terahertz-range photo luminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of similar to 2.3 - 3.2 cm(-1) has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm(2).
引用
收藏
页码：613 / +
页数：3
相关论文
共 50 条
  • [21] Anomalous coiling of SiGe/Si and SiGe/Si/Cr helical nanobelts
    Zhang, Li
    Ruh, Elisabeth
    Gruetzmacher, Detlev
    Dong, Lixin
    Bell, Dominik J.
    Nelson, Bradley J.
    Schoenenberger, Christian
    NANO LETTERS, 2006, 6 (07) : 1311 - 1317
  • [22] Towards SiGe terahertz VCSELs
    Kelsall, RW
    Ikonic, Z
    Harrison, P
    Paul, DJ
    Lynch, SA
    Bates, R
    Norris, DJ
    Liew, SL
    Cullis, AG
    Arnone, DD
    Pidgeon, CR
    Murzyn, P
    Robbins, DJ
    Soref, RA
    PROGRESS IN ADVANCED MATERIALS AND PROCESSES, 2004, 453-454 : 1 - 8
  • [23] Si-based alloys:: SiGe and SiGe:C
    Meyer, DJ
    SILICON EPITAXY, 2001, 72 : 345 - 395
  • [24] High speed Si/SiGe and Ge/SiGe MODFETs
    Aniel, F
    Ensico-Aguilar, M
    Zerounian, N
    Crozat, P
    Adde, R
    Hackbarth, T
    Herzog, JH
    König, U
    2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, : 29 - 32
  • [25] Phonon-pumped SiGe-Si interminiband terahertz laser
    Sun, G
    Soref, RA
    Khurgin, JB
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) : 376 - 380
  • [26] A Review Of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
    Paul, D. J.
    Matmon, G.
    Townsend, P.
    Zhang, J.
    Zhao, M.
    Ni, W. X.
    IETE JOURNAL OF RESEARCH, 2007, 53 (03) : 285 - 292
  • [27] Si/SiGe Bound-to-continuum Terahertz Quantum Cascade Emitters
    Paul, D. J.
    Matmon, G.
    Lever, L.
    Ikonic, Z.
    Kelsall, R. W.
    Chrastina, D.
    Isella, G.
    von Kaenel, H.
    Mueller, E.
    Neels, A.
    SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 865 - +
  • [28] Simulated [111] Si-SiGe terahertz quantum cascade laser
    Lever, L.
    Valavanis, A.
    Ikonic, Z.
    Kelsall, R. W.
    APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [29] Nondestructive inspection of SiGe films using laser terahertz emission microscopy
    Nakamura, Akihiro
    Omura, Ken
    Sakai, Kenji
    Kiwa, Toshihiko
    Tsukada, Keiji
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
  • [30] N-type SiGe/Ge Superlattice Structures for Terahertz Emission
    Halpin, John
    Myronov, Maksym
    Rhead, Stephen
    Leadley, David R.
    2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 2014, : 65 - 66
12345