Terahertz emission from phosphor Centers in SiGe and SiGe/Si semiconductors

被引：0
|
作者：
Paylov, S. G. [1 ]
Huebers, H. M. [1 ]
Abrosimov, N. V. [2 ]
Riernann, H. [2 ]
Radarnson, H. H. [3 ]
Bekin, N. A. [4 ]
Yablonsky, A. N. [4 ]
Zhukavin, R. Kh. [4 ]
Drozdov, Yu. N. [4 ]
Shastin, V. N. [4 ]
机构：
[1] German Aerosp Ctr DLR, Inst Planetary Res, D-12489 Berlin, Germany
[2] Inst Crystal Growth, D-12489 Berlin, Germany
[3] Royal Inst Technol KTH, Kista 16640, Sweden
[4] Russian Acad Sci, Inst Phys Microstruct, Moscow 603950, Russia
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷
基金：
俄罗斯基础研究基金会;
关键词：
silicon-germanium; terahertz emission;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Terahertz-range photo luminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of similar to 2.3 - 3.2 cm(-1) has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm(2).
引用
收藏
页码：613 / +
页数：3
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