A Highly Reliable and Low Power RHBD Flip-Flop Cell for Aerospace Applications

被引:0
|
作者
Yan, Aibin [1 ]
Qian, Kuikui [1 ]
Cui, Jie [1 ]
Cui, Ningning [1 ]
Huang, Zhengfeng [2 ]
Wen, Xiaoqing [3 ]
Girard, Patrick [4 ]
机构
[1] Anhui Univ, Sch Comp Sci & Technol, Hefei, Peoples R China
[2] Hefei Univ Technol, Sch Microelect, Hefei, Peoples R China
[3] Kyushu Inst Technol, Grad Sch Comp Sci & Syst Engn, Fukuoka, Japan
[4] Univ Montpellier, LIRMM, CNRS, Montpellier, France
来源
2022 IEEE 40TH VLSI TEST SYMPOSIUM (VTS) | 2022年
关键词
radiation hardness; circuit reliability; flip-flop cell; soft error; double-node-upset; DESIGN; SINGLE;
D O I
10.1109/VTS52500.2021.9794197
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In space, the impact of radiative particles, such as neutrons and heavy ions, can change the node states of a flip-flop, thus resulting in loss of data. In this paper, a Highly reliable and Low power Radiation-hardened-by-design (RHBD) Flip-Flop cell, namely HLRFF, completely hardened against double-node-upsets (DNUs), is proposed for aerospace applications. The HLRFF is a master-slave structure. The master latch is mainly constructed from two 2-input C-elements (CEs) and one 2-input clock-gating based CE, while the slave latch has an additional keeper at the output stage. The verification results demonstrate that the proposed HLRFF is completely DNU-tolerant. Furthermore, compared to the state-of-the-art radiation-hardened FF cells, the proposed HLRFF can reduce power consumption by approximately 69%. However, only the proposed HLRFF is not only completely DNU-tolerant but also insensitive to high-impedance-state.
引用
收藏
页数:6
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