Photo-Electrical Properties of MgZnO Thin-Film Transistors With High-k Dielectrics

被引：16

作者：

Li, Jyun-Yi ^{[1
]}

Chang, Sheng-Po ^{[1
]}

Hsu, Ming-Hung ^{[1
]}

Chang, Shoou-Jinn ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2018年 / 30卷 / 01期

关键词：

MgZnO; high-k dielectric; phototransistor; CHANNEL; PERFORMANCE; OXIDE;

D O I：

10.1109/LPT.2017.2774272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, magnesium zinc oxide (MgZnO) was deposited to fabricate a thin-film transistor (TFT) by radio-frequency magnetron sputtering. We used alumina as MgZnO TFT gate insulator layer via an atomic layer deposition method. The MgZnO TFT with Al2O3 insulator could exhibit a mobility of 7.73 cm(2)/Vs, threshold voltage of 4.2 V, and subthreshold swing of 0.29 V/decade. Compared with our previous published study, the current switching ratio was improved by nearly two orders of magnitude. Furthermore, the hysteresis phenomenon had been investigated and the results showed that the high-k gate insulator could improve the interface state caused by the traps.

引用

页码：59 / 62

页数：4

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