A Wideband Monolithically Integrated Photonic Receiver in 0.25-μm SiGe:C BiCMOS Technology

被引：0

作者：

Eissa, M. H. ^{[1
]}

Awny, A. ^{[1
]}

Winzer, G. ^{[1
]}

Kroh, M. ^{[1
]}

Lischke, S. ^{[1
]}

Knoll, D. ^{[1
]}

Zimmermann, L. ^{[1
]}

Kissinger, D. ^{[1
,2
]}

Ulusoy, A. C. ^{[1
,3
]}

机构：

[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[2] Tech Univ Berlin, Einsteinufer 17, D-10587 Berlin, Germany

[3] Michigan State Univ, ECE Dept, E Lansing, MI 48823 USA

来源：

ESSCIRC CONFERENCE 2016 | 2016年

关键词：

Electronic photonic integrated circuit; transimpedance amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a 54 Gb/s monolithically integrated silicon photonics receiver (Rx). A germanium photodiode (Ge-PD) is monolithically integrated with a transimpedance amplifier (TIA) and low frequency feedback loop to compensate for the DC input overload current. Bandwidth enhancement techniques are used to extend the bandwidth compared to previously published monolithically integrated receivers. Implemented in a 0.25 mu m SiGe:C BiCMOS electronic/photonic integrated circuit (EPIC) technology, the Rx operates at lambda=1.55 mu m, achieves an optical/electrical (O/E) bandwidth of 47GHz with only +/- 5ps group delay variation and a sensitivity of 0.2dBm for 4.5x10(-11) BER at 40 Gb/s and 0.97dBm for 1.05x10(-6) BER at 54 Gb/s. It dissipates 73mW of power, while occupying 1.6mm(2) of area. To the best of the author's knowledge, this work presents the state-of-the-art bandwidth and bit rate in monolithically integrated photonic receivers.

引用

页码：487 / 490

页数：4

共 50 条

[21] A Monolithically Integrated Segmented Driver and Modulator in 0.25 μm SiGe: C BiCMOS with 13 dB Extinction Ratio at 28 Gb/s
Rito, P.
Lopez, I. Garcia
Petousi, D.
Zimmermann, L.
Kroh, M.
Lischke, S.
Knoll, D.
Kissinger, D.
Ulusoy, A. C.
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
[22] LDMOSFET and SiGe:C HBT integrated in a 0.25μm BiCMOS technology for RF-PA applications.
Muller, D
Giry, A
Arnaud, C
Arricastres, C
Sommet, R
Szelag, B
Monroy, A
Pache, D
PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 168 - 171
[23] A 52-75 GHz Frequency Quadrupler in 0.25-μm SiGe BiCMOS Process
Kuo, Nai-Chung
Tsai, Zuo-Min
Schmalz, Klaus
Scheytt, Johann Christoph
Wang, Huei
2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 365 - 368
[24] Dual-mode RF receiver front-end using a 0.25-μm 60-GHz fT SiGe:C BiCMOS7RF technology
Moreira, CP
Kerherve, E
Jarry, P
Shirakawa, AA
Belot, D
SBCCI2004:17TH SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN, PROCEEDINGS, 2004, : 88 - 93
[25] A Four-Antenna 802.11a Receiver integrated in 0.25 μm SiGe BiCMOS with Spatial Weighting
Wickert, Michael
Mayer, Uwe
Eickhoff, Ralf
Ettinger, Frank
FREQUENZ, 2012, 66 (11-12) : 331 - 337
[26] BiCMOS7RF:: a highly-manufacturable 0.25-μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy
Baudry, H
Szelag, B
Deléglise, F
Laurens, M
Mourier, J
Saguin, F
Troillard, G
Chantre, A
Monroy, A
PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2003, : 207 - 210
[27] Performance Improvement of a Monolithically Integrated C-Band Receiver Enabled by an Advanced Photonic BiCMOS Process
Lischke, S.
Knoll, D.
Eissa, M. H.
Kroh, M.
Peczek, A.
Zimmermann, L.
Awny, A.
2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2017, : 50 - 53
[28] A 68-82 GHz Integrated Wideband Linear Receiver using 0.18 μm SiGe BiCMOS
Chen, Austin Ying-Kuang
Baeyens, Yves
Chen, Young-Kai
Lin, Jenshan
2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 365 - 368
[29] A digital receiver architecture for bluetooth in 0.25-μm CMOS technology and beyond
Neubauer, Andre
Hammes, Markus
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (09) : 2044 - 2053
[30] A 10 Gb/s Linear Burst-Mode Receiver in 0.25 μm SiGe: C BiCMOS
Ossieur, Peter
Quadir, Nasir A.
Porto, Stefano
Antony, Cleitus
Han, Wei
Rensing, Marc
O'Brien, Peter
Townsend, Paul D.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (02) : 381 - 390

← 1 2 3 4 5 →