Graphene field-effect transistors based on boron nitride gate dielectrics

被引：0

作者：

Meric, Inanc ^{[1
]}

Dean, Cory ^{[1
,3
]}

Young, Andrea ^{[2
]}

Hone, Jim ^{[3
]}

Kim, Philip ^{[2
]}

Shepard, Kenneth L. ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

来源：

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm(2)/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BNas a gate dielectric for graphene FETs.

引用

页数：4

共 50 条

[31] Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology
Kam, Kevin A.
Tengan, Brianne I. C.
Hayashi, Cody K.
Ordonez, Richard C.
Garmire, David G.
SENSORS, 2018, 18 (09)
[32] Graphene field-effect transistors
Reddy, Dharmendar
Register, Leonard F.
Carpenter, Gary D.
Banerjee, Sanjay K.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (31)
[33] Field-effect transistors based on cubic indium nitride
Oseki, Masaaki
Okubo, Kana
Kobayashi, Atsushi
Ohta, Jitsuo
Fujioka, Hiroshi
SCIENTIFIC REPORTS, 2014, 4
[34] Field-effect transistors based on cubic indium nitride
Masaaki Oseki
Kana Okubo
Atsushi Kobayashi
Jitsuo Ohta
Hiroshi Fujioka
Scientific Reports, 4
[35] Transport behaviors in graphene field effect transistors on boron nitride substrate
Alarcon, A.
Nguyen, V. Hung
Berrada, S.
Querlioz, D.
Saint-Martin, J.
Bournel, A.
Dollfus, P.
2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012,
[36] Dynamic Gate Control of Aryldiazonium Chemistry on Graphene Field-Effect Transistors
Bazan, Claudia M.
Beraud, Anouk
Nguyen, Minh
Bencherif, Amira
Martel, Richard
Bouilly, Delphine
NANO LETTERS, 2022, 22 (07) : 2635 - 2642
[37] Side-gate graphene field-effect transistors with high transconductance
Haehnlein, B.
Haendel, B.
Pezoldt, J.
Toepfer, H.
Granzner, R.
Schwierz, F.
APPLIED PHYSICS LETTERS, 2012, 101 (09)
[38] Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors
Ge, Daohan
Qian, Dongliang
Chen, Guanggui
Zhang, Liqiang
Ren, Naifei
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6, 2016, 72 (04): : 257 - 262
[39] Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
Sasama, Yosuke
Iwasaki, Takuya
Monish, Mohammad
Watanabe, Kenji
Taniguchi, Takashi
Takahide, Yamaguchi
APPLIED PHYSICS LETTERS, 2024, 125 (09)
[40] Functional impact of gate dielectrics in emerging metal halide perovskite field-effect transistors
Nketia-Yawson, Vivian
Nketia-Yawson, Benjamin
Jo, Jea Woong
MATERIALS TODAY PHYSICS, 2024, 45

← 1 2 3 4 5 →