Electronic and optical properties of GaN-based quantum wells

被引：0
|
作者：
Suzuki, M [1 ]
Uenoyama, T [1 ]
机构：
[1] Matsushita Elect Ind Co Ltd, Cent Res Labs, Kyoto 61902, Japan
来源：
GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS: PHYSICS AND APPLICATIONS | 1998年 / 6卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
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页码：307 / 342
页数：36
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