Electronic and optical properties of GaN-based quantum wells

被引：0
|
作者：
Suzuki, M [1 ]
Uenoyama, T [1 ]
机构：
[1] Matsushita Elect Ind Co Ltd, Cent Res Labs, Kyoto 61902, Japan
来源：
GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS: PHYSICS AND APPLICATIONS | 1998年 / 6卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：307 / 342
页数：36
相关论文
共 50 条
  • [1] Light emission properties of GaN-based double heterostructures and quantum wells
    Loeber, DAS
    Redwing, JM
    Anderson, NG
    Tischler, MA
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 949 - 954
  • [2] Electronic and optical properties of nonpolar a-plane GaN quantum wells
    Schulz, S.
    Badcock, T. J.
    Moram, M. A.
    Dawson, P.
    Kappers, M. J.
    Humphreys, C. J.
    O'Reilly, E. P.
    PHYSICAL REVIEW B, 2010, 82 (12)
  • [3] Advances in growth and optical properties of GaN-based quantum dots
    Arakawa, Yasuhiko
    Kako, Satoshi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (14): : 3512 - 3522
  • [4] Wavefunction engineering for GaN-based quantum wells and superlattices
    Ram-Mohan, LR
    Girgis, AM
    Albrecht, JD
    Litton, CW
    Steiner, TD
    Physics of Semiconductors, Pts A and B, 2005, 772 : 941 - 942
  • [5] Paramagnetic resonance in GaN-based single quantum wells
    Carlos, WE
    Nakamura, S
    APPLIED PHYSICS LETTERS, 1997, 70 (15) : 2019 - 2021
  • [6] The role of piezoelectric fields in GaN-based quantum wells
    Hangleiter, A
    Im, JS
    Kollmer, H
    Heppel, S
    Off, J
    Scholz, F
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, 3 (15):
  • [7] The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
    Li, T.
    Wei, Q. Y.
    Fischer, A. M.
    Huang, J. Y.
    Huang, Y. U.
    Ponce, F. A.
    Liu, J. P.
    Lochner, Z.
    Ryou, J. -H.
    Dupuis, R. D.
    APPLIED PHYSICS LETTERS, 2013, 102 (04)
  • [8] Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
    Scheibenzuber, Wolfgang G.
    Schwarz, Ulrich T.
    APPLIED PHYSICS EXPRESS, 2012, 5 (04)
  • [9] Auger losses in GaN-based quantum wells: Microscopic theory
    Pasenow, B.
    Koch, S. W.
    Hader, J.
    Moloney, J. V.
    Sabathil, M.
    Linder, N.
    Lutgen, S.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S864 - S868
  • [10] On the importance of radiative and Auger losses in GaN-based quantum wells
    Hader, J.
    Moloney, J. V.
    Pasenow, B.
    Koch, S. W.
    Sabathil, M.
    Linder, N.
    Lutgen, S.
    APPLIED PHYSICS LETTERS, 2008, 92 (26)
12345