Theory of slightly doped Mott insulator

被引:0
|
作者
Nagaosa, N
Lee, TK
Ho, CM
Tohyama, T
Maekawa, S
机构
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[2] AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3030046, Japan
[3] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[4] Natl Ctr Theoret Sci, Div Phys, Hsinchu 300, Taiwan
[5] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
t-t '-t ''-J model; ARPES; variational wave function;
D O I
10.1016/S0921-4534(02)02604-7
中图分类号
O59 [应用物理学];
学科分类号
摘要
Wave functions (wfs) for the slightly doped Mott insulator are studied numerically to reveal the nature of the doped holes/electrons. It is found that a common variational wf reproduces the dispersion of both a single hole and an electron observed experimentally. This is due to the fact that the quantum fluctuation dominates in the quantum antiferromagnet, and the wf is robust against the hole/electron doping. Besides this quasi-particle state, the novel spin liquid state is found to be stabilized at k = (pi, 0) by t' and t" values appropriate for hole doped case. For more holes/electrons, we propose a new wf which has lower energy compared with the projected SDW + d-RVB state. This state has much less superconducting correlation with the small pocket of the Fermi surface. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:15 / 18
页数:4
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