Comparative study of combustion laws for Mo-Si-N and W-Si-N ternary systems

被引:7
|
作者
Gabrielyan, Armine V. [1 ]
Manukyan, Khachatur V. [1 ]
Kharatyan, Suren L. [1 ,2 ]
机构
[1] Yerevan State Univ, Dept Chem Phys, Yerevan, Armenia
[2] A Nalbandyan Inst Chem Phys NAS Armenia, Lab Kinet SHS Proc, Yerevan, Armenia
关键词
gas-solid reactions (preparation and processing); high-temperature alloys (phemomena); metals (types of material); chemical synthesis (preparation and processing);
D O I
10.1016/j.jallcom.2006.12.116
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Combustion laws in the Mo-Si-N and W-Si-N systems were studied. Thermodynamic analyses performed for these systems have shown that within certain intervals of parameters (the Si/Me ratio, nitrogen pressure, etc.), two-phase products consisting of MoSi2(WSi2) and Si3N4 are formed. Main factors influencing the combustion parameters, as well as phase composition and microstructure of products for both the systems considered were established experimentally. The leading stages of the combustion process in Mo(W)-Si-N systems (nitriding of silicon and/or siliconizing of the metal) de ending on experimental conditions were revealed. Optimum conditions for synthesizing MoSi2-Si3N4 Particulate composite containing 10 wt.% of silicon nitride were determined. (C) 2007 Elsevier B.V. All fights reserved.
引用
收藏
页码:394 / 399
页数:6
相关论文
共 50 条
  • [1] Oxidation of nanocrystalline Mo-Si-N and nanolayered Mo-Si-N/SiC coatings
    Torri, P
    JOURNAL OF MATERIALS RESEARCH, 1999, 14 (09) : 3552 - 3558
  • [2] Amorphous Mo-N and Mo-Si-N films in microelectromechanical systems
    Kattelus, H
    Ylönen, M
    Blomberg, M
    FATIGUE & FRACTURE OF ENGINEERING MATERIALS & STRUCTURES, 2005, 28 (08) : 743 - 749
  • [3] Crystallization and oxidation behavior of Mo-Si-N coatings
    Hirvonen, J. -P.
    Suni, I.
    Kattelus, H.
    Lappalainen, R.
    Torri, P.
    Kung, H.
    Jervis, T. R.
    Nastasi, M.
    Tesmer, J. R.
    SURFACE & COATINGS TECHNOLOGY, 1995, 74-75 (1-3): : 981 - 985
  • [4] The role of N in the resputtering inhibition of Si in W-Si-N reactively sputtered thin layers
    Vomiero, A
    Marchi, EB
    Mariotto, G
    Della Mea, G
    Scandurra, A
    Puglisi, O
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [5] Properties of reactively sputtered W-Si-N films
    Musil, J
    Daniel, R
    Soldán, J
    Zeman, P
    SURFACE & COATINGS TECHNOLOGY, 2006, 200 (12-13): : 3886 - 3895
  • [6] Microstructure Evolution and Mechanical Behavior of Mo-Si-N Films
    Liu, Yu-Cheng
    Liang, Bing-Hao
    Huang, Chi-Ruei
    Wu, Fan-Bean
    COATINGS, 2020, 10 (10) : 1 - 13
  • [7] Potential of amorphous Mo-Si-N films for nanoelectronic applications
    Ylönen, M
    Kattelus, H
    Savin, A
    Kivinen, P
    Haatainen, T
    Ahopelto, J
    MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) : 337 - 340
  • [8] Corrosion properties of amorphous Mo-Si-N and nanolayered Mo-Si-Nn/SiC coatings
    Torri, P
    Mahiout, A
    Koskinen, J
    Hirvonen, JP
    Johansson, LS
    SCRIPTA MATERIALIA, 2000, 42 (06) : 609 - 613
  • [9] Ultrathin W-Si-N as diffusion barrier layer between Cu and Si
    Lu, Hua
    Qu, Xinping
    Wang, Guangwei
    Ru, Guoping
    Li, Bingzong
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2003, 24 (06): : 612 - 616
  • [10] Hardness versus structure in W-Si-N sputtered coatings
    Louro, C
    Cavaleiro, A
    SURFACE & COATINGS TECHNOLOGY, 1999, 116 : 74 - 80