Field Tuning the g Factor in InAs Nanowire Double Quantum Dots

被引:135
|
作者
Schroer, M. D. [1 ]
Petersson, K. D. [1 ]
Jung, M. [1 ]
Petta, J. R. [1 ]
机构
[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
SINGLE-ELECTRON SPIN; G-TENSOR; MANIPULATION; GIANT;
D O I
10.1103/PhysRevLett.107.176811
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots
    Zhang, X. W.
    Fan, W. J.
    Li, S. S.
    Xia, J. B.
    APPLIED PHYSICS LETTERS, 2007, 90 (15)
  • [32] SINGLE InAs/AlAs QUANTUM DOTS IN A MAGNETIC FIELD
    Sarkar, D.
    van der Meulen, H. P.
    Calleja, J. M.
    Meyer, J. M.
    Haug, R. J.
    Pierz, K.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [33] Tuning the bandgap of InAs quantum dots by selective-area MOCVD
    Mokkapati, S.
    Wong-Leung, J.
    Tan, H. H.
    Jagadish, C.
    McBean, K. E.
    Phillips, M. R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (08)
  • [34] Electronic states tuning of InAs self-assembled quantum dots
    Garcia, JM
    Mankad, T
    Holtz, PO
    Wellman, PJ
    Petroff, PM
    APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3172 - 3174
  • [35] Wavelength tuning of InAs quantum dots grown on (311)B InP
    Fréchengues, S
    Bertru, N
    Drouot, V
    Lambert, B
    Robinet, S
    Loualiche, S
    Lacombe, D
    Ponchet, A
    APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3356 - 3358
  • [36] Tuning InAs quantum dots for high areal density and wideband emission
    Ngo, C. Y.
    Yoon, S. F.
    Fan, W. J.
    Chua, S. J.
    APPLIED PHYSICS LETTERS, 2007, 90 (11)
  • [37] Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots
    Belykh, V. V.
    Yakovlev, D. R.
    Schindler, J. J.
    van Bree, J.
    Koenraad, P. M.
    Averkiev, N. S.
    Bayer, M.
    Silov, A. Yu.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
  • [38] Anisotropy of the electron Lande g factor in InAs/GaAs self-assembled quantum dots
    Testelin, C.
    Aubry, E.
    Eble, B.
    Bernardot, F.
    Chamarro, M.
    Lemaitre, A.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 2072 - 2074
  • [39] All-optical control of the exciton g-factor in InAs/GaAs quantum dots
    Quax, G. W. W.
    Ricketts, T. E. J. Campbell
    Yakunin, A. M.
    van Lippen, T.
    Notzel, R.
    Koenraad, P. M.
    Bosco, C. A. C.
    Rietjens, J. H. H.
    Koopmans, B.
    Silov, A. Yu.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 1832 - 1835
  • [40] Topology Driven g-Factor Tuning in Type-II Quantum Dots
    Llorens, J. M.
    Lopes-Oliveira, V
    Lopez-Richard, V
    Cardozo de Oliveira, E. R.
    Wewior, L.
    Ulloa, J. M.
    Teodoro, M. D.
    Marques, G. E.
    Garcia-Cristobal, A.
    Hai, G-Q
    Alen, B.
    PHYSICAL REVIEW APPLIED, 2019, 11 (04):