Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

被引：72
|
作者：
Sidorov, YG [1 ]
Dvoretskii, SA [1 ]
Varavin, VS [1 ]
Mikhailov, NN [1 ]
Yakushev, MV [1 ]
Sabinina, IV [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 09期
关键词：
D O I：
10.1134/1.1403569
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Growth processes were considered for heteroepitaxial structures based on a mercury-cadmium-telluride (MCT) solid solution deposited on GaAs and Si alternative substrates by molecular-beam epitaxy. Physical and chemical processes of growth and defect-generation mechanisms were studied for CdZnTe epitaxy on atomically clean singular and vicinal surfaces of gallium-arsenide substrates and CdHgTe films on CdZnTe/GaAs surfaces. ZnTe single-crystalline films were grown on silicon substrates. Methods for reducing the content of defects in CdZnTe/GaAs and CdHgTe films were developed. Equipment for molecular-beam epitaxy was designed for growing the heteroepitaxial structures on large-diameter substrates with a highly uniform composition over the area and their control in situ. Heteroepitaxial MCT layers with excellent electrical parameters were grown on GaAs by molecular-beam epitaxy. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1045 / 1053
页数：9
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