Monte Carlo modeling of nanometer scale MOSFETs

被引：0
|
作者：
Sangiorgi, Enrico [1 ]
Palestri, Pierpaolo [2 ]
Esseni, David [2 ]
Fiegna, Claudio [1 ]
Selmi, Luca [2 ]
机构：
[1] Univ Bologna, ACES DEIS, I-47123 Cesena, Italy
[2] Univ Udine, DIGEM, I-33100 Udine, Italy
来源：
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词：
D O I：
10.1109/IWPSD.2007.4472456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
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页码：68 / +
页数：2
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