25-Gb/s Multichannel 1.3-μ Surface-Emitting Lens-Integrated DFB Laser Arrays

被引：35
|
作者：
Adachi, Koichiro [1 ]
Shinoda, Kazunori [1 ]
Kitatani, Takeshi [1 ]
Fukamachi, Toshihiko [2 ]
Matsuoka, Yasunobu [1 ]
Sugawara, Toshiki [1 ]
Tsuji, Shinji [1 ,3 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
[2] Opnext Japan Inc, Yokohama, Kanagawa 2448567, Japan
[3] Photon Elect Technol Res Assoc, Tokyo 1120014, Japan
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2011年 / 29卷 / 19期
关键词：
Distributed-feedback (DFB) devices; surfacemount technology; optical interconnections; quantum-well lasers; surface-emitting lasers; HIGH-SPEED; MU-M; OPERATION; DIODE;
D O I：
10.1109/JLT.2011.2163814
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two multichannel 1.3-mu m lens integrated surface- emitting laser arrays for massive data links were fabricated. The basic structure of the lasers consists of a short InGaAlAs multiple-quantum-well distributed-feedback (DFB) active- stripe array monolithically integrated with both a 45 degrees total reflection mirror and an aspheric collimation lens. One of them, a four-channel laser array based on this structure, exhibited clear 25-Gb/s eye openings up to50 degrees degrees C over all four channels and achieved a total output of 100 Gb/s. The other laser, a multiple-wavelength array for wavelength-division-multiplexing applications, produces multiple-wavelength emission thanks to precisely modified DFB gratings by electron beam lithography. It exhibited nine-wavelength stable single-mode operation (side-mode suppression ratio > 40dB) between 1260 and 1290 nm at 3.7-nm intervals, and a clear 25-Gb/s eye opening for each wavelength. These two surface- emitting laser arrays have demonstrated their suitability for next-generation multichannel data links (including 100-Gb Ethernet and optical interconnects).
引用
收藏
页码：2899 / 2905
页数：7
相关论文
共 50 条
  • [41] 25-Gb/s 100-m MMF Transmission Using a Prototype 1.3-μm-Range CMOS-Based Transceiver for Optical Interconnections
    Lee, Yong
    Kawamura, Daichi
    Takai, Toshiaki
    Kogo, Kenji
    Adachi, Koichiro
    Sugawara, Toshiki
    Chujo, Norio
    Matsuoka, Yasunobu
    Hamamura, Saori
    Yamazaki, Kinya
    Ishigami, Yoshiaki
    Takemoto, Takashi
    Yuki, Fumio
    Yamashita, Hiroki
    Tsuji, Shinji
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (06) : 467 - 469
  • [42] Fabrication and characterization of individually addressable vertical-cavity surface-emitting laser arrays and integrated VCSEL/PIN detector arrays
    Kasten, A. M.
    Giannopoulos, A. V.
    Long, C.
    Chen, C.
    Choquette, K. D.
    VERTICAL - CAVITY SURFACE - EMITTING LASERS XI, 2007, 6484
  • [43] 100°C, 25 Gbit/s Direct Modulation of 1.3 μm Surface Emitting Laser
    Adachi, K.
    Shinoda, K.
    Shiota, T.
    Fukamachi, T.
    Kitatani, T.
    Matsuoka, Y.
    Kawamura, D.
    Sugawara, T.
    Tsuji, S.
    2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), 2010,
  • [44] ULTRA-LOW THRESHOLD 1490 NM SURFACE-EMITTING BH-DFB LASER DIODE WITH INTEGRATED MONITOR PHOTODIODE
    Moehrle, M.
    Kreissl, J.
    Molzow, W. D.
    Przyrembel, G.
    Wagner, C.
    Sigmund, A.
    Moerl, L.
    Grote, N.
    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
  • [45] 1.54-μm vertical-cavity surface-emitting laser transmission at 2.5 Gb/s
    Univ of California, Santa Barbara, Santa Barbara, United States
    IEEE Photonics Technol Lett, 3 (374-376):
  • [46] Integrated 1.3-μm DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance
    Stegmueller, B
    Hanke, C
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (08) : 1029 - 1031
  • [47] Stable polarization operation of 1.3-μm wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
    Okuno, YL
    Gan, KG
    Chou, HF
    Chiu, YJ
    Wang, CS
    Wu, S
    Geske, J
    Björlin, ES
    Bowers, JE
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) : 1006 - 1014
  • [48] 1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
    Yu, HC
    Wang, JS
    Su, YK
    Chang, SJ
    Lai, FI
    Chang, YH
    Kuo, HC
    Sung, CP
    Yang, HPD
    Lin, KF
    Wang, JM
    Chi, JY
    Hsiao, RS
    Mikhrin, S
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (1-4) : 418 - 420
  • [49] First 40-km SMF Transmission for 100-Gbit/s Ethernet System Based on 25-Gbit/s 1.3-μm Electroabsorption Modulator Integrated with a DFB Laser Module
    Fujisawa, T.
    Arai, M.
    Fujiwara, N.
    Kobayashi, W.
    Tadokoro, T.
    Tsuzuki, K.
    Akage, Y.
    Iga, R.
    Yamanaka, T.
    Kano, F.
    2009 35TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC), 2009,
  • [50] Parallel-ring-resonator Tunable Laser Integrated with Electroabsorption Modulator for 100-Gb/s (25-Gb/s x 4) Optical Packet Switching
    Segawa, T.
    Kobayashi, W.
    Matsuo, S.
    Sato, T.
    Iga, R.
    Takahashi, R.
    2012 38TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATIONS (ECOC), 2012,
12345