Influence of variability on the performance of HfO2 memristor-based convolutional neural networks

被引:7
|
作者
Romero-Zaliz, R. [1 ]
Perez, E. [2 ]
Jimenez-Molinos, F. [3 ]
Wenger, C. [2 ,4 ]
Roldan, J. B. [3 ]
机构
[1] Granada Univ, Andalusian Res Inst Data Sci & Computat Intellige, Granada, Spain
[2] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Oder, Germany
[3] Univ Granada, Dept Elect & Tecnol Comp, Granada, Spain
[4] BTU Cottbus Senftenberg, Cottbus, Germany
关键词
Memristors; Multilevel RRAMs; Hardware neural networks; Variability;
D O I
10.1016/j.sse.2021.108064
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A study of convolutional neural networks (CNNs) was performed to analyze the influence of quantization and variability in the network synaptic weights. Different CNNs were considered accounting for the number of convolutional layers, size of the filters in the convolutional layer, number of neurons in the final network layers and different sets of quantization levels. The conductance levels of fabricated 1T1R structures based on HfO2 memristors were considered as reference for four or eight level quantization processes at the inference stage of the CNNs, which were previous trained with the MNIST dataset. We also included the variability of the experimental conductance levels that was found to be Gaussian distributed and was correspondingly modeled for the synaptic weight implementation.
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页数:5
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