A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

被引：7

作者：

Loquai, Sven ^{[1
]}

Bunge, Christian-Alexander ^{[2
]}

Ziemann, Olaf ^{[1
]}

Schmauss, Bernhard ^{[3
]}

Kruglov, Roman ^{[1
]}

机构：

[1] Polymer Opt Fiber Applicat Ctr POF AC, D-90489 Nurnberg, Germany

[2] Univ Telecommun Leipzig, Deutsch Telekom AG, D-04277 Leipzig, Germany

[3] Univ Erlangen Nurnberg LHFT, D-91058 Erlangen, Germany

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2010年 / 28卷 / 18期

关键词：

Analytic model; p-i-n photodetector; large area; short wavelength; SIMULATION;

D O I：

10.1109/JLT.2010.2059372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize highspeed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion-and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).

引用

页码：2646 / 2653

页数：8

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