Enhanced Short-circuit Capability for 1.2 kV SiC SBD-integrated Trench MOSFETs Using Cu Blocks Sintered on the Source Pad

被引：5
|
作者：
Yao, Kailun [1 ]
Kato, Fumiki [2 ]
Tanaka, So [2 ]
Harada, Shinsuke [2 ]
Sato, Hiroshi [2 ]
Yano, Hiroshi [1 ]
Iwamuro, Noriyuki [1 ]
机构：
[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan
[2] Natl Inst Adv Ind Sci & Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan
来源：
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年
关键词：
Cu block heat sink; front-side heat dissipation; SiC trench MOSFETs; short-circuit withstanding capability; TCAD simulation;
D O I：
10.1109/ISPSD49238.2022.9813664
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this study, a thick Cu block (0.2 mm) with high heat capacitance was fabricated and attached to the source pad of a 1.2 kV Schottky barrier diode wall integrated trench MOSFET (SWITCH-MOS), to improve the ability to withstand a short-circuit while maintaining low on-resistance. Experimental results show that at a low drain-to-source voltage (V-dd=100 V), the Cu block can improve the short-circuit endurance time and the short-circuit energy density by 15.1 % and 18.4 %, respectively. TCAD simulation results show that during a long short-circuit transient, Joule heat can be transferred from SiC to a Cu block, thus providing a greater capacity for withstanding a short-circuit.
引用
收藏
页码：297 / 300
页数：4
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