Ultra high power 10 kV, 50 A SiC PiN diodes

被引：0

作者：

Das, MK ^{[1
]}

Hull, BA ^{[1
]}

Richmond, JT ^{[1
]}

Heath, B ^{[1
]}

Sumakeris, JJ ^{[1
]}

Powell, AR ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra high power 10 W, 50 A SiC PiN diodes have been developed with a low, forward voltage drop (V-F) of 3.75 V and a fast reverse recovery time of 150 nsec. This is the highest reported power rating for a single SiC chip (dimensions: 8.7 mm x 8.7 mm). Furthermore, all of the historical problems with the SiC PiN diode technology such as ineffective edge termination (V-BD increased to > 70% of ideal breakdown voltage), poor ohmic contacts to p-type SiC (pc reduced to < 10(-4) Omega cm(2)), and forward voltage drift (Delta V-F reduced to < 0.1 V) have been solved with design, material, and process improvements which have resulted in high overall device yields. A combination of performance, reliability, and yield has the SiC PiN diode technology poised for a revolutionary impact in the world of power semiconductor devices.

引用

页码：299 / 302

页数：4

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