Investigation on initial growth of Er2O3 films on Si(001)

被引:0
|
作者
Zhu Yanyan [1 ]
Fang Zebo [2 ]
Liao Can [2 ]
Chen Sheng [2 ]
Xu Run [2 ]
机构
[1] Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China
[2] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
来源
JOURNAL OF RARE EARTHS | 2007年 / 25卷
关键词
gate dielectric; high k oxides; rare earths;
D O I
暂无
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The epitaxial growth of Er2O3 films has been achieved on Si(001) substrates by MBE at the growth temperature of 700 degrees C in an oxygen pressure of 7 x 10(-6) Torr. Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er2O3 films on Si in O-2 pressures of 7 x 10(-6) Torr. An interface layer was observed at the initial growth of Er2O3 film on Si even at room temperature, which is supposed to be attributed to the effect of the Er atom catalytic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O-2 pressure is a little insufficient at a high substrate temperature.
引用
收藏
页码:314 / 317
页数:4
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