InGaN-based red light-emitting diodes: from traditional to micro-LEDs

被引:63
|
作者
Zhuang, Zhe [1 ]
Iida, Daisuke [1 ]
Ohkawa, Kazuhiro [1 ]
机构
[1] King Abdullah Univ Sci & Technol KAUST, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia
关键词
InGaN; red light-emitting diodes; red micro-light-emitting diodes; chip size; electroluminescence; SURFACE RECOMBINATION; HIGH-EFFICIENCY; BLUE; GAN; PERFORMANCE; EMISSION; IMPACT; GREEN; POWER;
D O I
10.35848/1347-4065/ac1a00
中图分类号
O59 [应用物理学];
学科分类号
摘要
InGaN-based LEDs are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates).
引用
收藏
页数:13
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