A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

被引：18

作者：

Yang, Ching-Yuan ^{[1
,2
]}

Chang, Chih-Hsiang ^{[1
,3
]}

Lin, Jung-Mao ^{[1
,3
]}

Weng, Jun-Hong ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Grad Inst Elect Engn, Taichung 40227, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

[3] Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 03期

关键词：

Back-gate MOS; varied p-n junction capacitance; varied transconductance; voltage-controlled oscillator (VCO); BAND; OSCILLATOR;

D O I：

10.1109/LMWC.2010.2102011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 mu m CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.

引用

页码：163 / 165

页数：3

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