Layer Thickness Impact on Second Harmonic Generation Characterization of SOI Wafers

被引：0

作者：

Damianos, D. ^{[1
]}

Ionica, I. ^{[1
]}

Changala, J. ^{[2
]}

Lei, M. ^{[2
]}

Kaminski-Cachopo, A. ^{[1
]}

Blanc-Pelissier, D. ^{[3
]}

Cristoloveanu, S. ^{[1
]}

Vitrant, G. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, Grenoble INP, Minatec, IMEP LAHC, 3 Parvis Louis Neel CS 50257, F-38016 Grenoble, France

[2] FemtoMetrix, 1850 East St Andrew Pl, Santa Ana, CA 92705 USA

[3] INSA Lyon, INL UMR 5270, 7 Ave Jean Capelle, F-69621 Villeurbanne, France

来源：

2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017) | 2017年

关键词：

Second Harmonic Generation; SOI; nonlinear optics modeling; multilayers; ON-INSULATOR WAFERS; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. As a result of this behavior the SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

引用

页码：184 / 187

页数：4

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