3-inch single-crystal LiTaO3 films onto metallic electrode using Smart Cut™ technology

被引：16

作者：

Tauzin, A. ^{[1
]}

Dechamp, J. ^{[1
]}

Madeira, F. ^{[1
]}

Mazen, F. ^{[1
]}

Zussy, M. ^{[1
]}

Deguet, C. ^{[1
]}

Clavelier, L. ^{[1
]}

Moulet, J. -S. ^{[2
]}

Richtarch, C. ^{[2
]}

Akatsu, T. ^{[2
]}

Yoshimi, M. ^{[2
]}

Rigny, A. ^{[2
]}

机构：

[1] CEA GRE, CEA DRT LETI, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] SOITEC SA, Adv Technol Div, Parc Technolog Fontaines, F-38190 Bernin, France

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 13期

关键词：

D O I：

10.1049/el:20081057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Smart Cut (TM) technology has been used for LiTaO3 layer transfer. A 3-inch full wafer single-crystal LiTaO3 layer onto a carrier wafer comprising a metallic electrode is reported.

引用

页码：822 / +

页数：2

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