Interdiffused InGaAs/GaAs strained multiple quantum well infrared photodetector

被引：0
|
作者：
Lee, ASW [1 ]
Karunasiri, G [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong
来源：
1998 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/HKEDM.1998.740178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of interdiffusion on strained InGaAs/GaAs quantum well infrared photodetector is investigated. Transverse magnetic and transverse electric infrared intersubband transitions are observed after interdiffusion. The absorption peak wavelength is red shifted from the as grown 10.20 to the interdiffused 10.5 and 11.17 mu m, tor 5 and 10 s annealing at 850 degrees C respectively, without appreciable degradation in absorption strength. Responsivity spectra of both 0 degrees and 90 degrees polarization are ol compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is found to be an order of magnitude larger than the as-grown one at 77K.
引用
收藏
页码：14 / 17
页数：4
相关论文
共 50 条
  • [21] Optimization of strained quantum-well InGaAs/GaAs heterolaser structures
    Gorbylev, V.A.
    Petrov, A.I.
    Petukhov, A.B.
    Chel'nyj, A.A.
    Kvantovaya Elektronika (Moscow), 1993, 20 (05):
  • [22] Degradation behavior in InGaAs/GaAs strained-quantum well lasers
    Takeshita, Tatsuya
    Sugo, Mitsuru
    Nishiya, Teruhiko
    Iga, Ryuzou
    Fukuda, Mitsuo
    Itaya, Yoshio
    Microelectronics Reliability, 1998, 38 (6-8): : 1211 - 1214
  • [23] ELECTROABSORPTION ENHANCEMENT IN DISORDERED, STRAINED INGAAS/GAAS QUANTUM-WELL
    MICALLEF, J
    LI, EH
    WEISS, BL
    APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2768 - 2770
  • [24] Optical and structure properties of InGaAs/GaAs strained quantum well material
    Li, M
    Zhang, BS
    Wang, YX
    Wang, XH
    Pan, HY
    Liu, GJ
    ISTM/2005: 6th International Symposium on Test and Measurement, Vols 1-9, Conference Proceedings, 2005, : 3178 - 3180
  • [25] Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps
    Maria Herminia Balgos
    Jessica Pauline Afalla
    Sheryl Vizcara
    Deborah Lumantas
    Elmer Estacio
    Arnel Salvador
    Armando Somintac
    Optical and Quantum Electronics, 2015, 47 : 3053 - 3063
  • [26] Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps
    Herminia Balgos, Maria
    Pauline Afalla, Jessica
    Vizcara, Sheryl
    Lumantas, Deborah
    Estacio, Elmer
    Salvador, Arnel
    Somintac, Armando
    OPTICAL AND QUANTUM ELECTRONICS, 2015, 47 (08) : 3053 - 3063
  • [27] High gain, broadband InGaAs/InGaAsP quantum well infrared photodetector
    Li, J.
    Choi, K. K.
    Klem, J. F.
    Reno, J. L.
    Tsui, D. C.
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [28] HIGH-SPEED INGAAS/GAAS STRAINED MULTIPLE QUANTUM-WELL LASERS WITH LOW DAMPING
    NAGARAJAN, R
    FUKUSHIMA, T
    BOWERS, JE
    GEELS, RS
    COLDREN, LA
    APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2326 - 2328
  • [29] Asymmetry in the characteristic of GaAs/AlGaAs quantum well infrared photodetector
    Li, Na
    Li, Ning
    Lu, Wei
    Yuan, Xian-Zhang
    Li, Zhi-Feng
    Dou, Hong-Fei
    Liu, Jing-Jiao
    Shen, Xue-Chu
    Jin, Li
    Li, Hong-Wei
    Zhou, Jun-Ming
    Huang, Yi
    Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2001, 20 (06): : 411 - 414
  • [30] GaAs/AlGaAs quantum well infrared photodetector with low noise
    Jun Deng
    Bin Wang
    Jun Han
    Jian-jun Li
    Guang-di Shen
    Optoelectronics Letters, 2005, 1 (1) : 37 - 39
12345