Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer

被引:14
|
作者
Yu, G. Q. [1 ,2 ,3 ]
Feng, J. F. [2 ,3 ]
Kurt, H. [2 ,3 ]
Liu, H. F. [1 ]
Han, X. F. [1 ]
Coey, J. M. D. [2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
[3] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I
10.1063/1.4723836
中图分类号
O59 [应用物理学];
学科分类号
摘要
Linear response and low frequency noise have been investigated in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer. Linear and hysteresis-free switching was observed for the Co50Fe50 thickness t <= 1 nm. A tunneling magnetoresistance ratio of up to 108% and large magnetic field sensitivity value of 61%/mT were obtained at room temperature when t = 1.0 nm. The angular dependence of magnetoresistance suggests that weak coupling between superparamagnetic islands in a 1.0 nm free layer permits continuous rotation of magnetization, whereas the islands in a 0.8 nm layer switch rather independently. The frequency dependence of noise power spectrum density and field dependence of Hooge parameter (alpha) also behave differently for junctions with 0.8 and 1.0 nm free layers. The noise sensitivity of 1.0 nm free layer junctions is independent of bias, and it is estimated to reach 400 pT/Hz 0.5 at 500 kHz. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723836]
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Voltage assisted magnetic switching in Co50Fe50 interdigitated electrodes on piezoelectric substrates
    Boukari, H.
    Cavaco, C.
    Eyckmans, W.
    Lagae, L.
    Borghs, G.
    Journal of Applied Physics, 2007, 101 (05):
  • [22] Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
    Han, X.F. (xfhan@aphy.iphy.ac.cn), 1600, American Institute of Physics Inc. (114):
  • [23] Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
    Li, D. L.
    Feng, J. F.
    Yu, G. Q.
    Guo, P.
    Chen, J. Y.
    Wei, H. X.
    Han, X. F.
    Coey, J. M. D.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (21)
  • [24] Effect of intermixing on the magnetic properties of Co50Fe50/Ni80Fe20 multilayers
    Rengarajan, S.
    Yun, E.J.
    Kang, W.S.
    Walser, R.M.
    Journal of Applied Physics, 1997, 81 (8 pt 2B):
  • [25] Effect of intermixing on the magnetic properties of Co50Fe50/Ni80Fe20 multilayers
    Rengarajan, S
    Yun, EJ
    Kang, WS
    Walser, RM
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 4761 - 4763
  • [26] Effect of Co interlayers in Fe/MgO/Fe magnetic tunnel junctions
    Wang, Yan
    Han, X. F.
    Zhang, X. -G.
    APPLIED PHYSICS LETTERS, 2008, 93 (17)
  • [27] Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film
    Takenaga, Takashi
    Tsuzaki, Yosuke
    Yoshida, Chikako
    Yamazaki, Yuichi
    Hatada, Akiyoshi
    Nakabayashi, Masaaki
    Iba, Yoshihisa
    Takahashi, Atsushi
    Noshiro, Hideyuki
    Tsunoda, Koji
    Aoki, Masaki
    Furukawa, Taisuke
    Fukumoto, Hiroshi
    Sugii, Toshihiro
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [28] Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
    Gan, H. D.
    Ikeda, S.
    Shiga, W.
    Hayakawa, J.
    Miura, K.
    Yamamoto, H.
    Hasegawa, H.
    Matsukura, F.
    Ohkubo, T.
    Hono, K.
    Ohno, H.
    APPLIED PHYSICS LETTERS, 2010, 96 (19)
  • [29] Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer
    郭会强
    唐伟跃
    刘亮
    危健
    李大来
    丰家峰
    韩秀峰
    Chinese Physics B, 2015, 24 (07) : 50 - 53
  • [30] Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer
    Guo Hui-Qiang
    Tang Wei-Yue
    Liu Liang
    Wei Jian
    Li Da-Lai
    Feng Jia-Feng
    Han Xiu-Feng
    CHINESE PHYSICS B, 2015, 24 (07)