Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing

被引：141

作者：

Tichy, J ^{[1
]}

Levert, JA

Shan, L

Danyluk, S

机构：

[1] Rensselaer Polytech Inst, Dept Mech Engn Aeronaut Engn & Mech, Troy, NY 12180 USA

[2] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 04期

关键词：

D O I：

10.1149/1.1391798

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A preliminary model for the contact mechanics and fluid mechanics of the chemical mechanical polishing process is presented. Only the basic equations of elastic contact surface mechanics and hydrodynamic lubrication are required. Although the model is highly idealized, no ad hoc assumptions or adjustable parameters are required. Some new experimental results are presented, reinforcing the counterintuitive experimental determination of suction fluid pressure below the pad. The model correctly predicts the magnitude of the suction pressure and the effect of load, speed and roughness. (C) 1999 The Electrochemical Society. S0013-4651(98)04-081-6. All rights reserved.

引用

页码：1523 / 1528

页数：6

共 50 条

[21] A mixed elastohydrodynamic lubrication model for simulation of chemical mechanical polishing with double-layer structure of polishing pad
Ping Zhou
Zhigang Dong
Renke Kang
Zhuji Jin
Dongming Guo
The International Journal of Advanced Manufacturing Technology, 2015, 77 : 107 - 116
[22] A mixed elastohydrodynamic lubrication model for simulation of chemical mechanical polishing with double-layer structure of polishing pad
Zhou, Ping
Dong, Zhigang
Kang, Renke
Jin, Zhuji
Guo, Dongming
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2015, 77 (1-4): : 107 - 116
[23] Contact Behavior and Chemical Mechanical Polishing (CMP) Performance of Hole-Type Polishing Pad
Kim, Hong Jin
Choi, Jae Kwang
Hong, Myung Ki
Lee, Kuntack
Ko, Yongsun
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012, 1 (04) : P204 - P209
[24] Analysis on the Contact Pressure Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern
Lv, Y. S.
Li, N.
Wang, J.
Zhang, T.
Duan, M.
Xing, X. L.
DIGITAL DESIGN AND MANUFACTURING TECHNOLOGY II, 2011, 215 : 217 - 222
[25] Polishing Pad in Chemical Mechanical Polishing
Cao W.
Deng Z.-H.
Li Z.-Y.
Ge J.-M.
Surface Technology, 2022, 51 (07): : 27 - 41
[26] A mixed elastohydrodynamic lubrication model with layered elastic theory for simulation of chemical mechanical polishing
Ping Zhou
Dongming Guo
Renke Kang
Zhuji Jin
The International Journal of Advanced Manufacturing Technology, 2013, 69 : 1009 - 1016
[27] A Particle-Augmented Mixed Lubrication Modeling Approach to Predicting Chemical Mechanical Polishing
Terrell, Elon J.
Higgs, C. Fred, III
JOURNAL OF TRIBOLOGY-TRANSACTIONS OF THE ASME, 2009, 131 (01): : 1 - 10
[28] Effects of suspending abrasives on the lubrication properties of slurry in chemical mechanical polishing of silicon wafer
Liu, JY
Jin, ZJ
Guo, DM
Kang, RK
ADVANCES IN GRINDING AND ABRASIVE TECHNOLOGY XIII, 2006, 304-305 : 359 - 363
[29] Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing
Zhao, Dewen
He, Yongyong
Wang, Tongqing
Lu, Xinchun
Luo, Jianbin
TRIBOLOGY INTERNATIONAL, 2013, 66 : 330 - 336
[30] Material removal model for non-contact chemical mechanical polishing
ZHANG JianQun & ZHANG ChaoHui School of Mechanical
Chinese Science Bulletin, 2008, (23) : 3746 - 3752

← 1 2 3 4 5 →