Effect of Plasma Process for SiO2 Film on Sidewall

被引：1

作者：

Tanimura, Tatsuhiko ^{[1
]}

Hsiao, Chihhsiang ^{[1
]}

Akiyama, Koji ^{[1
]}

Hirota, Yoshihiro ^{[1
]}

Sato, Jun ^{[2
]}

Kaitsuka, Takanobu ^{[1
]}

机构：

[1] Tokyo Electron Ltd, Leading Edge Proc Dev Ctr, Nirasaki 4070192, Japan

[2] Tokyo Electron Tohoku Ltd, Dept Dev, Oshu 0231101, Japan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2015年 / 28卷 / 03期

关键词：

Dielectric films; leakage currents; metal oxide semiconductor (MOS) devices; plasma materials processing; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; SILICON-OXIDE; TEMPERATURE; DIOXIDE;

D O I：

10.1109/TSM.2015.2444404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We evaluated the physical and electrical characteristics of SiO2 treated by plasma oxidation on top and sidewall. The plasma process is less effective for SiO2 on sidewall than on top and further less for small pattern. Both the characteristics for SiO2 on sidewall are sensitive to plasma condition in deposition sequence, while not for SiO2 on top. When the plasma process is used as post treatment on SiO2 with high coverage and the poor characteristics, they are also not dependent on the condition. Moreover, the post plasma treatment can improve electrical characteristic beyond the level of SiO2 deposited by the same plasma oxidation condition.

引用

页码：278 / 282

页数：5

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