Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs/based HEMT

被引：54

作者：

Lenka, T. R. ^{[1
]}

Panda, A. K. ^{[1
]}

机构：

[1] Natl Inst Sci & Technol, Berhampur 761008, Odisha, India

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 05期

关键词：

MOBILITY; POLARIZATION; SIMULATION; ALN/GAN; MODEL;

D O I：

10.1134/S1063782611050198

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature. DOI: 10.1134/S1063782611050198

引用

页码：650 / 656

页数：7

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