Hanle effect in semiconductor with weak spin-orbit coupling

被引：0

作者：

Mi, Yi-lin ^{[1
]}

Zhao, Xiao-qing ^{[1
]}

Wang, Lan ^{[2
]}

机构：

[1] North China Univ Technol, Coll Sci, Beijing 100041, Peoples R China

[2] Shijiazhang Railway Univ, Mech Engn Coll, Shijiazhuang 050043, Peoples R China

来源：

OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷

基金：

中国国家自然科学基金;

关键词：

Spin precession; Hanle effect; Spin dephasing; ELECTRIC-FIELD; TRANSPORT; INJECTION; SILICON; SYSTEM;

D O I：

10.4028/www.scientific.net/MSF.663-665.978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical model to study Hanle effect for materials with weak spin-orbit coupling is developed. It considers the contributions from not only the drift current but also the diffusion part, which pronouncedly enlarges the application scope of the model. The spin lifetime in spin drift diffusion equation is also corrected by considering the thermal effect and the influence of external electrical field.

引用

页码：978 / +

页数：2

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