50 Watt S-band Power Amplifier in 0.25 μm GaN Technology

被引：0

作者：

van der Bent, Gijs ^{[1
]}

de Hek, Peter ^{[1
]}

van der Graaf, Marcel ^{[1
]}

van Vliet, Frank E. ^{[1
]}

机构：

[1] TNO, NL-2597 AK The Hague, Netherlands

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %

引用

页码：333 / 336

页数：4

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