A 1.8 GHz fully integrated low voltage LC VCO in silicon on sapphire CMOS

被引：0

作者：

Bhatia, R ^{[1
]}

Jalan, U ^{[1
]}

Chakraborty, S ^{[1
]}

Yoon, SW ^{[1
]}

Nuttinck, S ^{[1
]}

Pinel, S ^{[1
]}

Laskar, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Yamacraw Design Ctr, Atlanta, GA 30332 USA

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5mum Silicon On Sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/Az at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume 14.7 mW power from a 1.5V supply.

引用

页码：579 / 582

页数：4

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