A precise ray tracing simulation model for GaN based light emitting diodes

被引：2

作者：

Yang, Zhiyuan ^{[1
]}

Yu, Tongjun ^{[1
]}

Mu, Sen ^{[1
]}

Chen, Zhizhong ^{[1
]}

Zhang, Guoyi ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; LEDs; design; simulation; optical properties; VAPOR-PHASE EPITAXY; PATTERNED SAPPHIRE; NEAR-ULTRAVIOLET; QUANTUM EFFICIENCY; LEDS; IMPROVEMENT;

D O I：

10.1002/pssc.200983624

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A simulation model for light extraction efficiency (LEE) was proposed, considering the real structure of GaN_based light emitting diodes and absorption of GaN, electrodes and encapsulation materials, as well as the difference between TE and TM modes, the effects of active layer reabsoption and photo recycling. The slope angle and the depth of the pattern were optimized for patterned sapphire substrates (PSSs). Results show fill factor affects the LEE improvement most and air holes buried in the interface between n-GaN and PSS diminish LEE improvement of the pattern. Then a best improvement of 26% is obtained with the optimized pattern. Especially it is noticeable that the simulated result of LEE (39.2%) and the derived internal quantum efficiency (43.9%) agree well with the experimental results (38%, 45.1% respectively). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 50 条

[21] The fabrication of GaN-based light emitting diodes (LEDs)
Nguyen X.L.
Nguyen T.N.N.
Chau V.T.
Dang M.C.
Advances in Natural Sciences: Nanoscience and Nanotechnology, 2010, 1 (02)
[22] Electrical characterization of GaN based blue light emitting diodes
Awaah, MA
Nana, R
Das, K
PROCEEDINGS OF THE IEEE SOUTHEASTCON 2004: EXCELLENCE IN ENGINEERING, SCIENCE, AND TECHNOLOGY, 2005, : 17 - 22
[23] A model for the thermal degradation of metal/ (p-GaN) interface in GaN-based light emitting diodes
Meneghini, M.
Rigutti, L.
Trevisanello, L.R.
Cavallini, A.
Meneghesso, G.
Zanoni, E.
Journal of Applied Physics, 2008, 103 (06):
[24] A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes
Meneghini, M.
Rigutti, L.
Trevisanello, L. R.
Cavallini, A.
Meneghesso, G.
Zanoni, E.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
[25] GaN-based light-emitting diodes suitable for white light
Mukai, T
Yamada, M
Mitani, T
Narukawa, Y
Shioji, S
Niki, I
Sonobe, SY
Izuno, K
Suenaga, R
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII, 2003, 4996 : 156 - 165
[26] Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate
Sheng, Yang
Xia, Chang Sheng
Li, Zhan Ming Simon
Cheng, Li Wen
OPTICAL AND QUANTUM ELECTRONICS, 2013, 45 (07) : 605 - 610
[27] Simulation of InGaN/GaN light-emitting diodes with Patterned Sapphire Substrate
Sheng, Yang
Xia, Chang Sheng
Li, Z. M. Simon
Cheng, Li Wen
2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2012, : 23 - +
[28] Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate
Yang Sheng
Chang Sheng Xia
Zhan Ming Simon Li
Li Wen Cheng
Optical and Quantum Electronics, 2013, 45 : 605 - 610
[29] Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
Marco Mandurrino
Michele Goano
Marco Vallone
Francesco Bertazzi
Giovanni Ghione
Giovanni Verzellesi
Matteo Meneghini
Gaudenzio Meneghesso
Enrico Zanoni
Journal of Computational Electronics, 2015, 14 : 444 - 455
[30] GaN-based light-emitting diodes and laser diodes, and their recent progress
Nagahama, S
Iwasa, N
Senoh, M
Matsushita, T
Sugimoto, Y
Kiyoku, H
Kozaki, T
Sano, M
Matsumura, H
Umemoto, H
Chocho, K
Yanamoto, T
Mukai, T
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (01): : 1 - 7

← 1 2 3 4 5 →