A precise ray tracing simulation model for GaN based light emitting diodes

被引：2
|
作者：
Yang, Zhiyuan [1 ]
Yu, Tongjun [1 ]
Mu, Sen [1 ]
Chen, Zhizhong [1 ]
Zhang, Guoyi [1 ]
机构：
[1] Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期
关键词：
GaN; LEDs; design; simulation; optical properties; VAPOR-PHASE EPITAXY; PATTERNED SAPPHIRE; NEAR-ULTRAVIOLET; QUANTUM EFFICIENCY; LEDS; IMPROVEMENT;
D O I：
10.1002/pssc.200983624
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A simulation model for light extraction efficiency (LEE) was proposed, considering the real structure of GaN_based light emitting diodes and absorption of GaN, electrodes and encapsulation materials, as well as the difference between TE and TM modes, the effects of active layer reabsoption and photo recycling. The slope angle and the depth of the pattern were optimized for patterned sapphire substrates (PSSs). Results show fill factor affects the LEE improvement most and air holes buried in the interface between n-GaN and PSS diminish LEE improvement of the pattern. Then a best improvement of 26% is obtained with the optimized pattern. Especially it is noticeable that the simulated result of LEE (39.2%) and the derived internal quantum efficiency (43.9%) agree well with the experimental results (38%, 45.1% respectively). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：3
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