The effect of segregation during the growth of relaxor ferroelectric PMNT single crystals

被引：0
|
作者：
Luo, HS [1 ]
Xu, GS [1 ]
Xu, HQ [1 ]
Wang, PC [1 ]
Yin, ZW [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, Lab Funct Inorgan Mat, Shanghai 201800, Peoples R China
来源：
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Relaxor-based ferroelectric (1-x)PMN-xPT (x=0.2-0.4) single crystals were grown by a modified Bridgman method. The segregation during the growth of (1-x)PMN-xPT single crystals directly from melt was investigated by several ways for the samples cut from initial part and the ending part of a boule. The effect of segregation during the growth of solid solution (1-x)PMN-xPT single crystals was verified in melting points from DTA analysis, lattice structures from XRD and other electric properties. The segregation coefficient k is about 0.95 during the growth of PMVT 76/24 single crystal. In order to improve the homogeneity within a boule, the effect of segregation must be taken into account to grow large high quality (1-x)PMN-xPT single crystals.
引用
收藏
页码：667 / 670
页数：4
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