Tuning surface charge property by floating gate field effect transistor

被引：9
|
作者：
Xue, Song [1 ]
Hu, Ning [2 ,3 ]
Qian, Shizhi [1 ,2 ]
机构：
[1] Old Dominion Univ, Inst Micro Nanotechnol, Norfolk, VA 23529 USA
[2] Yeungnam Univ, Sch Mech Engn, Gyongsan 712749, South Korea
[3] Chongqing Univ, Minist Educ, Key Lab Biorheol Sci & Technol, Chongqing 400030, Peoples R China
来源：
JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2012年 / 365卷 / 01期
关键词：
Microfluidics; Nanofluidics; Electrokinetics; Field effect control; Field effect transistor (FET); Floating gate field effect transistor (FGFET);
D O I：
10.1016/j.jcis.2011.08.079
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Tuning surface charge property by a floating gate field effect transistor (FGFET) is proposed and analyzed for the first time. The FGFET has an additional floating gate electrode embedded inside the dielectric channel wall and is superior to the conventional FET to tune the surface charge property of a dielectric material in contact with an aqueous solution. (C) 2011 Elsevier Inc. All rights reserved.
引用
收藏
页码：326 / 328
页数：3
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