Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4

被引：40

作者：

Shi, Gang ^{[1
,2
]}

Zhang, Mingjie ^{[1
,2
]}

Yan, Dayu ^{[1
,2
]}

Feng, Honglei ^{[1
,2
]}

Yang, Meng ^{[1
,2
]}

Shi, Youguo ^{[1
,2
]}

Li, Yongqing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 04期

基金：

中国国家自然科学基金;

关键词：

73; 23; -b; 75; 47; -m; 70; Ak; THIN-FILMS; ABSENCE;

D O I：

10.1088/0256-307X/37/4/047301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long-range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a lnT-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range, such correction is absent in the anomalous Hall conductivity. Our work demonstrates that MnSb2Te4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.

引用

页数：4

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