Vapor-solid interfacial reaction and polymerization for wafer-scale uniform and ultrathin two-dimensional organic films

被引:1
|
作者
Yao, Wenqian [1 ,2 ]
Yang, He [1 ]
Zhang, Qingsong [1 ]
Shi, Longxian [1 ,2 ]
Sun, Jianzhe [1 ]
Guo, Yunlong [1 ]
Jiang, Lang [1 ]
Wu, Bin [1 ]
Liu, Yunqi [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sino Danish Coll, Sino Danish Ctr Educ & Res, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
organic films; interface; chemical vapor deposition; copper catalyst; debromination; CHARGE-TRANSPORT; CRYSTALLINE; TRANSISTORS; GRAPHENE; COPPER;
D O I
10.1007/s40843-021-1918-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical vapor deposition is a conventional synthesis method for growing large-scale and high-quality two-dimensional materials, such as graphene, hexagonal boron nitride, and transition-metal dichalcogenides. For organic films, solution-based methods, such as inkjet printing, spin coating, and drop and micro-contact printing, are commonly used. Herein, we demonstrate a general method for growing wafer-scale continuous, uniform, and ultrathin (2-5 nm) organic films. This method is based on a copper (Cu) surface-mediated reaction and polymerization of several equivalent bromine (Br)-containing pi-conjugated small molecules (C12S3Br6, C24H4O2Br2, and C24H12Br2N4), in which local surface-mediated polymerization and internal pi-pi interactions among organic molecules are responsible for the dimension and uniformity control of the thin films. Specifically, the growth rate and morphology of thin films were found to be Cu-facet-dependent, and single-crystal Cu(111) surfaces could improve the uniformity of thin films. In addition, the number of Br groups and size of organic molecules were critical for crystallinity and thin-film formation. This method can be used to fabricate heterostructures, such as organic film/graphene, giving room for various functional materials and device applications.
引用
收藏
页码:1577 / 1585
页数:9
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