A Field-induced Threshold Switching Model of Phase-change Memory

被引：0
|
作者：
Wei, Yiqun [1 ]
Lin, Xinnan [1 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen, Peoples R China
来源：
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年
关键词：
phase-change memory; field-induced model; threshold switching;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents a field-induced threshold switching model of phase-change memory, which combines the field-induced hopping transport mechanism and trap to band excitation mechanism to establish the conductivity model coupled with the electric field. Based on this model, the dependencies with scaling for switching characteristics are studied. The results show a good consistence with the measurements.
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页数：2
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