A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation

被引：3

作者：

Yadav, Jyoti ^{[1
]}

Anoop, M. D. ^{[1
]}

Singh, Rini ^{[2
]}

Yadav, Nisha ^{[1
]}

Rao, N. Srinivasa ^{[1
]}

Singh, Fouran ^{[3
]}

Jain, Ankur ^{[2
,5
]}

Ichikawa, Takayuki ^{[4
]}

Awasthi, Kamlendra ^{[1
]}

Kumar, Manoj ^{[1
]}

机构：

[1] Malaviya Natl Inst Technol Jaipur, Dept Phys, Jaipur 302017, Rajasthan, India

[2] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan

[3] Interuniv Accelerator Ctr IUAC, New Delhi 110067, India

[4] Hiroshima Univ, Nat Sci Ctr Basic Res & Dev, Higashihiroshima 7398530, Japan

[5] Suresh Gyan Vihar Univ, Ctr Renewable Energy & Storage, Jaipur 302017, Rajasthan, India

来源：

MATERIALS LETTERS | 2022年 / 306卷

关键词：

Ion implantation; Fermi level; Strain Engineering; TOPOLOGICAL INSULATOR;

D O I：

10.1016/j.matlet.2021.130923

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In layered structure materials, tuning of strain is used to control critical electronic and physical properties. In this work, precise and controlled tuning of strain is achieved with implantation. Thin films of BiSbTe3 were implanted with Fe ion of energy 100 keV at 5 different fluences. The lattice strain is found to be reversibly tuned with Fe implantation. The effect of Fe ions on the electronic band structure of BiSbTe3 is confirmed by the change in resistivity and tuning of Fermi level with implantation. The observed reversible tuning of the Fermi level suggests the possibility of device control applications.

引用

页数：4

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