A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation

In layered structure materials, tuning of strain is used to control critical electronic and physical properties. In this work, precise and controlled tuning of strain is achieved with implantation. Thin films of BiSbTe3 were implanted with Fe ion of energy 100 keV at 5 different fluences. The lattice strain is found to be reversibly tuned with Fe implantation. The effect of Fe ions on the electronic band structure of BiSbTe3 is confirmed by the change in resistivity and tuning of Fermi level with implantation. The observed reversible tuning of the Fermi level suggests the possibility of device control applications.