A fully integrated high efficiency SiGe HBT class F power amplifier at 2.2 GHz

被引：5
|
作者：
O'Sullivan, JA [1 ]
Delabie, C [1 ]
McCarthy, KG [1 ]
Murphy, A [1 ]
Murphy, PJ [1 ]
机构：
[1] Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland
来源：
2003 HIGH FREQUENCY POSTGRADUATE STUDENT COLLOQUIUM | 2003年
关键词：
D O I：
10.1109/HFPSC.2003.1242304
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully integrated high efficiency SiGe HBT Class F power amplifier (PA). A maximum on-chip Power Added Efficiency (PAE) of 25 % has been measured, which at 2.2 GHz and a supply voltage of 1.3 V, is to the forefront of fully integrated HBT Class F power amplifier design. The PA is suitable for applications that include DECT and GSM which employ the constant envelope modulation scheme, GMSK The power amplifier was fabricated using an advanced 0.18 um BiCMOS process [1].
引用
收藏
页码：48 / 51
页数：4
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