Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment

被引：3

作者：

Csik, Attila ^{[1
]}

Zayachuk, Dmytro M. ^{[2
]}

Slynko, Vasyl E. ^{[3
]}

Schmidt, Ute ^{[4
]}

Buga, Csaba ^{[1
]}

Vad, Kalman ^{[1
]}

机构：

[1] Hungarian Acad Sci ATOM, Inst Nucl Res, Bem Sqr 18-C, H-4026 Debrecen, Hungary

[2] Lviv Polytech Natl Univ, S Bandera Str 12, UA-79013 Lvov, Ukraine

[3] Inst Problems Mat Sci NASU, Vilde Str 5, UA-58001 Chernovtsy, Ukraine

[4] WITec GmbH, Lise Meitner Str 6, D-89081 Ulm, Germany

来源：

MATERIALS LETTERS | 2019年 / 236卷

关键词：

Raman spectroscopy; Tellurides; Amorphisation; Low energy ion bombardment; GETE; SNTE; PBTE;

D O I：

10.1016/j.matlet.2018.10.061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphisation effect on the surface of SnTe and GeTe samples under low Ar+ ion energy sputtering (160 eV) has been firstly observed. Scanning electron microscopy and Raman spectroscopy methods were used for the investigation. Microscope images show that ion bombardment changes significantly the morphology of SnTe and GeTe sample surfaces. Comparative Raman spectroscopy studies of the as-prepared and sputtered surfaces revealed that sputtering changes not only the surface morphology, but also the crystal structure of samples. Due to sputtering, the initial crystalline GeTe sample surface completely changed to amorphous, while the SnTe sample surface changed to a mixed amorphous-crystalline structure. This means that on the surface of IVB group binary tellurides an amorphisation can be evoked by low energy Ar+ ion bombardment, up to a few hundred electron volts energy. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：5 / 8

页数：4

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