Preparation and characterization of CdO films deposited by dc magnetron reactive sputtering

被引：160
|
作者：
Subramanyam, TK [1 ]
Uthanna, S [1 ]
Naidu, BS [1 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
来源：
MATERIALS LETTERS | 1998年 / 35卷 / 3-4期
关键词：
cadmium oxide; magnetron sputtering; thin films;
D O I：
10.1016/S0167-577X(97)00246-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper deals with the de magnetron reactive sputtering of cadmium in an oxygen and argon atmosphere. The dependence of cathode potential on the oxygen partial pressure has been explained in terms of cathode poisoning effects. The cadmium oxide films formed during this process have been studied for their structural, electrical and optical properties. At an optimum oxygen partial pressure of 1 x 10(-3) mbar, the films were single phase with polycrystalline in nature. The films showed resistivity of 4.6 x 10(-3) Ohm cm, Hall mobility of 53 cm(2)/V s, carrier concentration of 3.5 x 10(19) cm(-3), with an optical transmission of 85% in the wavelength range 600-1600 nm and with a band gap of 2.46 eV. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：214 / 220
页数：7
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