A 219-μW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications

被引:1
|
作者
Gladson, S. Chrisben [1 ]
Narayana, Adith Hari [2 ]
Thenmozhi, V. [2 ]
Bhaskar, M. [2 ]
机构
[1] REIN, Bangalore, Karnataka, India
[2] Natl Inst Technol, Dept ECE, RF CMOS IC Design Lab, Tiruchirappalli 620015, India
来源
SN APPLIED SCIENCES | 2021年 / 3卷 / 04期
关键词
5G; CMOS; Dual shunt peaking; IoT; Low-voltage; Low-power; LNA; IIP3; NF; Positive feedback;
D O I
10.1007/s42452-021-04402-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Due to the increased processing data rates, which is required in applications such as fifth-generation (5G) wireless networks, the battery power will discharge rapidly. Hence, there is a need for the design of novel circuit topologies to cater the demand of ultra-low voltage and low power operation. In this paper, a low-noise amplifier (LNA) operating at ultra-low voltage is proposed to address the demands of battery-powered communication devices. The LNA dual shunt peaking and has two modes of operation. In low-power mode (Mode-I), the LNA achieves a high gain (S21) of 18.87 dB, minimum noise figure (NFmin.) of 2.5 dB in the -3 dB frequency range of 2.3-2.9 GHz, and third-order intercept point (IIP3) of-7.9dBm when operating at 0.6 V supply. In high-power mode (Mode-II), the achieved gain, NF, and IIP3 are 21.36 dB, 2.3 dB, and 13.78dBm respectively when operating at 1 V supply. The proposed LNA is implemented in UMC 180 nm CMOS process technology with a core area of 0.40mm2 and the post-layout validation is performed using Cadence SpectreRF circuit simulator.
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页数:18
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