Crossed Exciton States in Complex Semiconductor Nanostructures

被引：0
|
作者：
Owschimikow, Nina [1 ]
Kolarczik, Mirco [1 ]
Kaptan, Yuecel [1 ]
Grosse, Nicolai B. [1 ]
Woggon, Ulrike [1 ]
机构：
[1] Tech Univ Berlin, Inst Opt & Atomare Phys, Str 17,Juni 135, D-10623 Berlin, Germany
来源：
2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on gain excitation spectra derived from two-color pump-probe experiments, we identify crossed exciton states formed in semiconductor nanostructures of mixed dimensionality and investigate their influence on the carrier dynamics.
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页数：2
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