A Study of Short Channel Performance of Dual Material strained silicon Trigate (DM Strained-Si TG) SOI MOSFET

被引：0
|
作者：
Banerjee, Pritha [1 ]
Saha, Priyanka [1 ]
Dash, Dinesh Kumar [1 ]
Sarkar, Subir Kumar [1 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India
来源：
2018 INTERNATIONAL CONFERENCE ON COMPUTING, POWER AND COMMUNICATION TECHNOLOGIES (GUCON) | 2018年
关键词：
Short channel effects; Trigate MOSFETs; Silicon-on-insulator (SOI) technology; Work function engineering; THRESHOLD VOLTAGE;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The current research highlights the analytical modeling for dual material strained silicon Trigate (DM Strained-Si TG) SOI MOSFET with additional work function engineered bottom gate. The device short channel behavior is investigated and compared with single material SOI trigate MOSFET equivalent to establish its superiority in improving the overall performance of the device and suppressing the limitations associated with device scaling. Verification of analytical data have been done using ATLAS simulated data.
引用
收藏
页码：101 / 104
页数：4
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