Electronic and optical properties of α-InX (X = S, Se and Te) monolayer: Under strain conditions

被引:39
|
作者
Jalilian, Jaafar [1 ]
Safari, Mandana [1 ]
机构
[1] Islamic Azad Univ, Kermanshah Branch, Young Researchers & Elite Club, Kermanshah, Iran
关键词
Semiconductor nanosheet; Indium chalcogenides; Optical properties; Band gap; Band structure; SINGLE-LAYER; BORON-NITRIDE; SOLAR-CELL; GAS; MOS2; NANOSHEET; MOBILITY; GROWTH;
D O I
10.1016/j.physleta.2017.01.024
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using ab initio study, the structural, electronic and optical properties of alpha-InX (X = S, Se and Te) are investigated under tensile and compressive strain conditions. The results illustrate that exerting biaxial tensile and compressive strain conditions can lead to a tunable energy gap with a linear trend. The shape of valence band maximum (VBM) and conduction band minimum (CBM) is so sensitive to applying tensile and compressive strain. Besides, a shift in optical spectra toward shorter wavelength (blue shift) occurs under compression. The exerting tensile strain, on the other hand, gives rise to a red shift in optical spectra correspondingly. The results have been presented that InX monolayers can be good candidates for optoelectronic applications as well. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1313 / 1320
页数:8
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