Si/SiGe HBT differential impulse generator for high-speed UWB applications

被引：4
|
作者：
Lin, D. [1 ]
Trasser, A. [1 ]
Schumacher, H. [1 ]
机构：
[1] Univ Ulm, Inst Electron Devices & Circuits, Ulm, Germany
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 24期
关键词：
PULSE-GENERATOR; TRANSMITTER;
D O I：
10.1049/el.2010.2299
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low power, fully-integrated heterojunction bipolar transistor (HBT) differential ultra-wideband (UWB) impulse generator for the 3.1-10.6 GHz frequency band is presented. The impulse generator is based on a cross-coupled oscillator being rapidly turned on and off by an on-chip generated controlling signal. The generated impulses of sub-nanosecond duration have a potential output repetition rate well into the gigahertz range. The design occupies a chip size of 0.3 mm(2) including pads. The total power consumption is only 6 mW at a repetition rate of 100 MHz.
引用
收藏
页码：1634 / 1635
页数：2
相关论文
共 50 条
  • [21] Design of BiCMOS SRAMs for high-speed SiGe applications
    Liu, Xuelian
    LeRoy, Mitchell R.
    Clarke, Ryan
    Chu, Michael
    Aquino, Hadrian O.
    Raman, Srikumar
    Zia, Aamir
    Kraft, Russell P.
    McDonald, John F.
    IET CIRCUITS DEVICES & SYSTEMS, 2014, 8 (06) : 487 - 498
  • [22] SiGe/Si HBT modeling for AMS/RF applications
    Yang, M. T.
    Kuo, Darryl C. W.
    Chang, Alan K. L.
    Kuo, C. W.
    Lee, C. Y.
    Chem, G. J.
    Liu, Sally
    Tang, Denny D.
    2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 26 - +
  • [23] Bearingless Generator Design and Optimization for High-Speed Applications
    Ahmed, Imthiaz
    Severson, Eric L.
    2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2021, : 4562 - 4569
  • [24] A HIGH-SPEED MULTIMODULUS HBT PRESCALER FOR FREQUENCY-SYNTHESIZER APPLICATIONS
    SHENG, NH
    PIERSON, RL
    WANG, KC
    NUBLING, RB
    ASBECK, PM
    CHANG, MCF
    EDWARDS, WL
    PHILLIPS, DE
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (10) : 1362 - 1367
  • [25] A 16-GHz ultra-high-speed Si-SiGe HBT comparator
    Jensen, JC
    Larson, LE
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (09) : 1584 - 1589
  • [26] Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit
    Jacquet, T.
    Sasso, G.
    Chakravorty, A.
    Rinaldi, N.
    Aufinger, K.
    Zimmer, T.
    d'Alessandro, V.
    Maneux, C.
    MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1433 - 1437
  • [27] Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS
    Miura, M
    Shimamoto, H
    Hayami, R
    Kodama, A
    Tominari, T
    Hashimoto, T
    Washio, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 857 - 865
  • [28] SiGe HBT Gilbert downconverter with an integrated miniaturized Marchand balun for UWB applications
    Tseng, Sheng-Che
    Meng, Chinchun
    Chang, Chia-Hung
    Huang, Guo-Wei
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 2132 - +
  • [29] High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes
    Wei, Hung-Ju
    Meng, Chinchun
    Chang, YuWen
    Lin, Yi-Chen
    Huan, Guo-Wei
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2008, 50 (06) : 1498 - 1500
  • [30] Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications
    Chung, Sung-Yong
    Park, Si-Young
    Daulton, Jeffrey W.
    Yu, Ronghua
    Berger, Paul R.
    Thompson, Phillip E.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 973 - 978
12345